document number: 91465 www.vishay.com s11-0915-rev. a, 16-may-11 1 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 power mosfet irfd020, sihfd020 vishay siliconix features ? for automatic insertion ? compact, end stackable ?fast switching ? ease of paralleling ? excellent temperature stability ? compliant to rohs directive 2002/95/ec description the hvmdip technology is the key to vishays advanced line of power mosfet transistors. the efficient geometry and unique processing of the hvmdip design achieves very low on-state resist ance combined with high transconductance and extreme device ruggedness. hvmdips feature all of the established advantages of mosfets such as voltage contro l, very fast switching, ease of paralleling, and temperatur e stability of the electrical parameters. the hvmdip 4 pin, dual-in-line package brings the advantages of hvmdips to high volume applications where automatic pc board insertion is desireable, such as circuit boards for computers, printers, telecommunications equipment, and consumer product s. their compatibility with automatic insertion equipme nt, low-profile and end stackable features represent the stat-of-the-art in power device packaging. notes a. t j = 25 c to 150 c b. repetitive rating; puls e width limited by maximum junction temperature. c. v dd = 25 v, starting t j = 25 c, l = 100 h, r g = 25 ? d. 1.6 mm from case. product summary v ds (v) 50 r ds(on) ( ? )v gs = 10 v 0.10 q g (max.) (nc) 24 q gs (nc) 7.1 q gd (nc) 7.1 configuration single n-channel mosfet g d s hvmdip d s g available rohs* compliant ordering information package hvmdip lead (pb)-free irfd020pbf SIHFD020-E3 snpb irfd020 sihfd020 absolute maximum ratings (t c = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage a v ds 50 v gate-source voltage v gs 20 continuous drain current v gs at 10 v t c = 25 c i d 2.4 a t c = 100 c 1.5 pulsed drain current b i dm 19 linear derating factor 0.0080 w/c inductive current, clamped l = 100 h i lm 19 a unclamped inductive curre nt (avalanche current) c i l 2.2 maximum power dissipation t c = 25 c p d 1.0 w operating junction and storage temperature range t j , t stg - 55 to + 150 c soldering recommendations (p eak temperature) for 10 s 300 d * pb containing terminations are not rohs compliant, exemptions may apply
www.vishay.com document number: 91465 2 s11-0915-rev. a, 16-may-11 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 irfd020, sihfd020 vishay siliconix notes a. repetitive rating; pulse widt h limited by maximum junction temperature (see fig. 11). b. pulse width ? 300 s; duty cycle ? 2 %. c. v dd = 25 v, starting t j = 25 c, l = 100 h, r g = 25 ? thermal resistance ratings parameter symbol typ. max. unit maximum junction-to-ambient r thja - 120 c/w specifications (t c = 25 c, unless otherwise noted) parameter symbol test condi tions min. typ. max. unit static drain-source brea kdown voltage v ds v gs = 0 v, i d = 250 a 50 - - v gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a 2.0 - 4.0 v gate-source leakage i gss v gs = 20 v - - 500 na zero gate voltage drain current i dss v ds = max. rating, v gs = 0 v - - 250 a v ds = max. rating x 0.8, v gs = 0 v, t c = 125 - - 1000 on-state drain current b i d(on) v gs = 10 v v ds > i d(on) x r ds(on) max. 2.4 - - a drain-source on-state resistance b r ds(on) v gs = 10 v i d = 1.4 a - 0.080 0.10 ? forward transconductance b g fs v ds = 20 v, i d = 7.5 a 4.9 7.3 - s dynamic input capacitance c iss v gs = 0 v, v ds = 25 v, f = 1.0 mhz - 400 - pf output capacitance c oss - 260 - reverse transfer capacitance c rss -44- total gate charge q g v gs = 10 v i d = 15 a, v ds = max. rating x 0.8 -1624 nc gate-source charge q gs -4.77.1 gate-drain charge q gd -4.77.1 turn-on delay time t d(on) v dd = 25 v, i d = 15 a, r g = 18 ? , r d = 1.7 ? -8.713 ns rise time t r -5583 turn-off delay time t d(off) -1624 fall time t f -2639 internal drain inductance l d between lead, 6 mm (0.25") from package and center of die contact -4.0- nh internal source inductance l s -6.0- drain-source body diode characteristics continuous source-dr ain diode current i s mosfet symbol showing the integral reverse p - n junction diode --2.4 a pulsed diode forward current c i sm --19 body diode voltage a v sd t c = 25 c, i s = 2.4 a, v gs = 0 v - - 1.4 v body diode reverse recovery time t rr t j = 25 c, i f = 15 a, di/dt = 100 a/s 57 130 310 ns body diode reverse recovery charge q rr 0.17 0.34 0.85 c forward turn-on time t on intrinsic turn-on time is negligible (turn-on is dominated by l s and l d ) d s g s d g
document number: 91465 www.vishay.com s11-0915-rev. a, 16-may-11 3 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 irfd020, sihfd020 vishay siliconix typical characteristics (25 c, unless otherwise noted) fig. 1 - typical output characteristics fig. 2 - typical output characteristics fig. 3 - typical transfer characteristics fig. 4 - normalized on-resistance vs. temperature
www.vishay.com document number: 91465 4 s11-0915-rev. a, 16-may-11 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 irfd020, sihfd020 vishay siliconix fig. 5 - typical capacitance vs. drain-to-source voltage fig. 6 - typical gate charge vs. gate-to-source voltage fig. 7 - typical source-drain diode forward voltage fig. 8 - maximum safe operating area
document number: 91465 www.vishay.com s11-0915-rev. a, 16-may-11 5 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 irfd020, sihfd020 vishay siliconix fig. 9 - maximum drain current vs. ambient temperature fig. 10 - maximum effective transient thermal impedance, junction-to-ambient fig. 11 - typical transconductance vs. drain current fig. 12 - breakdown voltage vs. temperature
www.vishay.com document number: 91465 6 s11-0915-rev. a, 16-may-11 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 irfd020, sihfd020 vishay siliconix fig. 13 - typical on-resistance vs. drain current fig. 14a - clamped inductive test circuit fig. 14b - clamped inductive waveforms fig. 15a - unclamped inductive test circuit fig. 15a - unclamped inductive load test waveforms fig. 16 - switching time test circuit fig. 17 - gate charge test circuit
document number: 91465 www.vishay.com s11-0915-rev. a, 16-may-11 7 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 irfd020, sihfd020 vishay siliconix fig. 18 - typical time to accumulated 1 % gate failure fig. 19 - typical high temperature reverse bias (htrb) failure rate vishay siliconix maintains worldw ide manufacturing capability. prod ucts may be manufactured at on e of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents su ch as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91465 .
document number: 91 000 www.vishay.com revision: 11-mar-11 1 disclaimer legal disclaimer notice vishay all product, product specifications and data ar e subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicab le law, vishay disc laims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, incl uding without limitation specia l, consequential or incidental dama ges, and (iii) any and all impl ied warranties, including warran ties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of pro ducts for certain types of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in gene ric applications. such statements are not binding statements about the suitability of products for a partic ular application. it is the customers responsibility to validate that a particu lar product with the properties described in th e product specification is su itable for use in a particul ar application. parameters provided in datasheets an d/or specifications may vary in different applications and perfo rmance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product co uld result in person al injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk and agr ee to fully indemnify and hold vishay and it s distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that vis hay or its distributor was negligent regarding the design or manufact ure of the part. please contact authorized vishay personnel t o obtain written terms and conditions regarding products designed fo r such applications. no license, express or implied, by estoppel or otherwise, to any intelle ctual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners.
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